Semiconductor device

ABSTRACT

A semiconductor device that allows easy hole extraction is provided. The semiconductor device includes: a semiconductor substrate having drift and base regions; a transistor portion formed in the semiconductor substrate; and a diode portion formed adjacent to the transistor portion and in the semiconductor substrate. In the transistor portion and the diode portion: a plurality of trench portions each arrayed along a predetermined array direction; and a plurality of mesa portions formed between respective trench portions are formed, among the plurality of mesa portions, at least one boundary mesa portion at a boundary between the transistor portion and the diode portion includes a contact region at an upper surface of the semiconductor substrate and having a concentration higher than that of the base region, and an area of the contact region at the boundary mesa portion is greater than an area of the contact region at another mesa portion.

This application is a divisional of U.S. application Ser. No. 15/900,810filed on Feb. 21, 2018, which is explicitly incorporated herein byreference. In turn priority is claimed from each of the followingJapanese patent applications, all of which are incorporated herein byreference:

NO. 2016-047188 filed in JP on Mar. 10, 2016,

NO. 2016-201972 filed in JP on Oct. 13, 2016,

NO. 2017-024925 filed in JP on Feb. 14, 2017, and

NO. PCT/JP2017/009843 filed on Mar. 10, 2017.

BACKGROUND 1. Technical Field

The present invention relates to a semiconductor device.

2. Related Art

Conventionally, a semiconductor device in which a transistor such as anIGBT and a diode such as a FWD are formed on the same chip has beenknown (please see Patent Document 1, for example).

Japanese Patent Application Publication No. 2015-135954

It is preferable if in a semiconductor device such as an IGBT, holes canbe extracted efficiently at the time of turn-off.

General Disclosure

A first aspect of the present invention provides a semiconductor device.The semiconductor device may include a semiconductor substrate. Thesemiconductor substrate may have a first conductivity type drift region.The semiconductor substrate may have a second conductivity type baseregion provided above the drift region. The semiconductor device mayinclude a transistor portion formed in the semiconductor substrate. Thesemiconductor device may include a diode portion formed adjacent to thetransistor portion and in the semiconductor substrate. In the transistorportion and the diode portion, a plurality of trench portions eacharrayed along a predetermined array direction may be formed

In the transistor portion and the diode portion, a plurality of mesaportions formed between respective trench portions may be formed. Amongthe plurality of mesa portions, at least one boundary mesa portion at aboundary between the transistor portion and the diode portion mayinclude a second conductivity type contact region that is at an uppersurface of the semiconductor substrate and has a concentration higherthan that of the base region. An area of the contact region at theboundary mesa portion may be greater than an area of the contact regionat another mesa portion

In the mesa portion formed in the transistor portion, an accumulationregion that has a concentration higher than that of the drift region maybe provided between the base region and the drift region. At least oneamong the boundary mesa portions may not be provided in the accumulationregion.

Among the plurality of trench portions, a trench portion adjacent to theboundary mesa portion may be a dummy trench portion. Among the pluralityof trench portions, at least one trench portion provided adjacent to atrench portion adjacent to the boundary mesa portion and on thetransistor portion side relative to the trench portion adjacent to theboundary mesa portion may be a dummy trench portion.

The accumulation region may have a first accumulation region formed at apredetermined depth position. The accumulation region may have a secondaccumulation region formed closer to the diode portion than the firstaccumulation region is and at a position shallower than the firstaccumulation region is. A trench portion adjacent to the secondaccumulation region may be a dummy trench portion.

The diode portion may have a lifetime killer on an upper surface side ofthe semiconductor substrate. In a region where the first accumulationregion is formed, the transistor portion may not have the lifetimekiller on the upper surface side of the semiconductor substrate. Theboundary mesa portion may have a lifetime killer on the upper surfaceside of the semiconductor substrate.

At the upper surface of the semiconductor substrate, the mesa portion onthe transistor portion side relative to the boundary mesa portion mayhave: a first conductivity type emitter region that has a concentrationhigher than that of the drift region; and the contact region. Theboundary mesa portion may not have the emitter region. At least parts ofthe mesa portions on the diode portion side relative to the boundarymesa portion may have the base region at the upper surface of thesemiconductor substrate.

Assuming that: a distance from a boundary between the transistor portionand the diode portion to the trench portion between the mesa portionhaving the emitter region and the boundary mesa portion is Da, and adistance from a lower surface of the semiconductor substrate to a lowersurface of the base region is Dt, a relationship 100 μm<Da+Dt<150 μm maybe satisfied.

Respective trench portions may be formed extending in an extensiondirection different from the array direction at the upper surface of thesemiconductor substrate. The mesa portion on the transistor portion siderelative to the boundary mesa portion may have the emitter region andthe contact region alternately along the extension direction at theupper surface of the semiconductor substrate. In the extensiondirection, the accumulation region may be formed to reach an outerposition relative to an end portion of the outermost emitter region.

The semiconductor device may further include an interlayer dielectricfilm formed at the upper surface of the semiconductor substrate. In theinterlayer dielectric film, a contact hole to expose the emitter regionand the contact region may be formed. In the extension direction, thecontact hole may be formed to reach an outer position relative to an endportion of the accumulation region.

A second aspect of the present invention provides a semiconductordevice. The semiconductor device may include a semiconductor substrate.The semiconductor substrate may have a first conductivity type driftregion. The semiconductor substrate may have a second conductivity typebase region provided above the drift region. The semiconductor devicemay include a trench portion that is formed at an upper surface of thesemiconductor substrate and extending in a predetermined extensiondirection, and penetrates the base region. The semiconductor device mayinclude a first conductivity type emitter region having a concentrationhigher than that of the drift region and a second conductivity typecontact region having a concentration higher than that of the baseregion that are formed in a region adjacent to the trench portion at theupper surface of the semiconductor substrate and alternately along theextension direction. The semiconductor device may include a firstconductivity type accumulation region that is formed between the baseregion and the drift region and has a concentration higher than that ofthe drift region. In the extension direction, the accumulation regionmay be formed to reach an outer position relative to an end portion ofthe outermost emitter region.

In the second aspect, the semiconductor device may further include aminterlayer dielectric film formed at the upper surface of thesemiconductor substrate. In the interlayer dielectric film, a contacthole to expose the emitter region and the contact region may be formed.In the extension direction, the contact hole may be formed to reach anouter position relative to an end portion of the accumulation region. Anend portion of the accumulation region in the extension direction may beformed such that a depth of part thereof decreases as a distance of thepart from an outermost edge thereof decreases.

The semiconductor device according to the second aspect may furtherinclude a second conductivity type well region that is formed at theupper surface of the semiconductor substrate and at an outer positionrelative to the contact region, and has a concentration higher than thatof the base region. At the upper surface of the semiconductor substrate,the base region may be formed between the contact region and the wellregion. In the extension direction, a distance from an end portion ofthe emitter region to an end portion of the accumulation region may beshorter than a distance from the end portion of the accumulation regionto an end portion of the contact hole.

At least a partial region below the emitter region may have a carrierpassage region where the accumulation region is not formed. An entireregion below the emitter region may be provided with the carrier passageregion. The carrier passage region may be also provided below an endportion that is part of the contact region and adjacent to the emitterregion.

The accumulation region may have a first accumulation region formed at apredetermined depth position. The accumulation region may have a secondaccumulation region formed closer to the emitter region than the firstaccumulation region is and at a position shallower than the firstaccumulation region is. Both the first accumulation region and thesecond accumulation region may be formed below the contact region.

The semiconductor device may further include an interlayer dielectricfilm formed at the upper surface of the semiconductor substrate. In theinterlayer dielectric film, a contact hole to expose the emitter regionand the contact region may be formed. In the extension direction, theaccumulation region may be formed to reach an outer position relative toan end portion of the contact hole.

A third aspect of the present invention provides a semiconductor device.The semiconductor device may include a semiconductor substrate. Thesemiconductor substrate may have a first conductivity type drift region.The semiconductor substrate may have a second conductivity type baseregion provided above the drift region. The semiconductor device mayinclude a trench portion that is formed at an upper surface of thesemiconductor substrate and extending in a predetermined extensiondirection, and penetrates the base region. The semiconductor device mayinclude a first conductivity type emitter region having a concentrationhigher than that of the drift region and a second conductivity typecontact region having a concentration higher than that of the baseregion that are formed in a region adjacent to the trench portion at theupper surface of the semiconductor substrate and alternately along theextension direction. The semiconductor device may include a firstconductivity type accumulation region that is formed between the baseregion and the drift region and has a concentration higher than that ofthe drift region. The semiconductor device may further include aninterlayer dielectric film formed at the upper surface of thesemiconductor substrate. In the interlayer dielectric film, a contacthole to expose the emitter region and the contact region may be formed.In the extension direction, the contact hole may be formed to reach anouter position relative to an end portion of the accumulation region.

The transistor portion and the diode portion in the semiconductor deviceaccording to the first aspect may further have a second conductivitytype collector region. The collector region may be provided at leastbelow the outermost contact region in an extension direction differentfrom the array direction. The transistor portion may further have afirst conductivity type accumulation region. The accumulation region maybe provided between the base region and the drift region. Theaccumulation region may be of a first conductivity type and have aconcentration higher than that of the drift region. An inner end portionof the collector region of the diode portion may be positioned at aninner position relative to an outer end portion of the accumulationregion of the transistor portion.

The transistor portion in the semiconductor device according to thefirst aspect may further have a first conductivity type emitter region.The emitter region may be of a first conductivity type and have aconcentration higher than that of the drift region. An inner end portionof the collector region of the diode portion may be positioned at aninner position relative to an outer end portion of the outermost emitterregion in the extension direction in the transistor portion.

The semiconductor device according to the second and third aspects mayfurther include a transistor portion and a diode portion. The transistorportion may be formed in the semiconductor substrate. The diode portionmay be formed adjacent to the transistor portion and in thesemiconductor substrate. The transistor portion and the diode portionmay further have a second conductivity type collector region. Thecollector region may be provided at least below the outermost contactregion in an extension direction. An inner end portion of the collectorregion of the diode portion may be positioned at an inner positionrelative to an outer end portion of the accumulation region of thetransistor portion

An inner end portion of the collector region of the diode portion may bepositioned at an inner position relative to an outer end portion of theoutermost emitter region in the extension direction in the transistorportion.

The summary clause does not necessarily describe all necessary featuresof the embodiments of the present invention. The present invention mayalso be a sub-combination of the features described above.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top view showing one example of a semiconductor device 100.

FIG. 2 is a figure showing one example of a cross-section taken alonga-a′ through the semiconductor device 100 shown in FIG. 1.

FIG. 3 is a figure showing another example of the cross-section takenalong a-a′ through a semiconductor substrate 10.

FIG. 4 is a figure for explaining the size of a predetermined part inthe semiconductor substrate 10 shown in FIG. 2 or FIG. 3.

FIG. 5 is a figure showing one example of a cross-section taken alongb-b′ through the semiconductor device 100 shown in FIG. 1.

FIG. 6 is an enlarged figure showing the portion near an end portion 98of an accumulation region 16 in the cross-section shown in FIG. 5.

FIG. 7 is a figure showing one example of a semiconductor device 200according to a comparative example.

FIG. 8 is a top view showing one example of a semiconductor device 300.

FIG. 9 is a figure showing one example of a cross-section taken alongc-c′ in FIG. 8.

FIG. 10 is a figure showing one example of a cross-section taken alongd-d′ in FIG. 8.

FIG. 11 is a figure showing one example of a cross-section taken alonge-e′ in FIG. 8.

FIG. 12 is a figure showing one example of a cross-section of a mesaportion 94 on a plane parallel with the Y-Z plane.

FIG. 13 is a figure showing another example of the cross-section of amesa portion 94 on the plane parallel with the Y-Z plane.

FIG. 14 is a top view showing one example of a semiconductor device 400.

FIG. 15 is a figure showing one example of a cross-section taken alongc-c′ through the semiconductor device 400 shown in FIG. 14.

FIG. 16 is a top view showing one example of a semiconductor device 500.

FIG. 17 is a figure showing one example of a cross-section taken alonga-a′ through the semiconductor device 500 shown in FIG. 16.

DESCRIPTION OF EXEMPLARY EMBODIMENTS

Hereinafter, (some) embodiment(s) of the present invention will bedescribed. The embodiment(s) do(es) not limit the invention according tothe claims, and all the combinations of the features described in theembodiment(s) are not necessarily essential to means provided by aspectsof the invention.

FIG. 1 is a top view showing one example of a semiconductor device 100.The semiconductor device 100 of the present example is a semiconductorchip having a transistor portion 70 including a transistor such as anIGBT (Insulated Gate Bipolar Transistor) and a diode portion 80including a diode such as a FWD (Free Wheel Diode). The diode portion 80is formed adjacent to the transistor portion 70 at the upper surface ofa semiconductor substrate. The upper surface of a semiconductorsubstrate refers to one of two principal surfaces of the semiconductorsubstrate that are opposite to each other. FIG. 1 shows a chip uppersurface around a chip end portion, and other regions are omitted.

In the present specification, the diode portion 80 may be assumed to bea region on a rear surface that is in an active region and matches acathode region, or a projection region that imaginarily appears if thecathode region is imaginarily projected toward the front surface sideperpendicularly to the rear surface of the semiconductor substrate.Also, the transistor portion 70 may be assumed to be a projection regionthat is in the active region and imaginarily appears if a collectorregion is imaginarily projected toward the front surface sideperpendicularly to the rear surface of the semiconductor substrate, anda region in which a predetermined unit configuration including emitterregions 12 and contact regions 15 are regularly arranged.

Also, although FIG. 1 shows an active region of the semiconductorsubstrate in the semiconductor device 100, the semiconductor device 100may have an edge termination portion surrounding the active region. Theactive region refers to a region where current flows if thesemiconductor device 100 is controlled to be turned on. The edgetermination portion relaxes electric field crowding on the upper surfaceside of the semiconductor substrate. The edge termination portion forexample has a guard ring, field plate, RESURF or a structure obtained bycombining them.

The semiconductor device 100 of the present example includes gate trenchportions 40, dummy trench portions 30, a well region 17, emitter regions12, base regions 14 and contact regions 15 that are formed inside theupper surface side of the semiconductor substrate. Also, thesemiconductor device 100 of the present example includes an emitterelectrode 52 and a gate electrode 50 provided above the upper surface ofthe semiconductor substrate. The emitter electrode 52 and the gateelectrode 50 are provided separate from each other. In the presentspecification, the gate trench portions 40 and the dummy trench portions30 are one example of trench portions.

An interlayer dielectric film is formed between the emitter electrode 52and the gate electrode 50, and the upper surface of the semiconductorsubstrate, but is omitted in FIG. 1. In the interlayer dielectric filmof the present example, contact holes 54, a contact hole 55 and contactholes 56 are formed penetrating the interlayer dielectric film.

The emitter electrode 52 passes through the contact holes 54 to contactthe emitter regions 12, the contact regions 15 and the base regions 14on the upper surface of the semiconductor substrate. Also, the emitterelectrode 52 passes through the contact holes 56 to be connected withdummy conductive portions in the dummy trench portions 30. Between theemitter electrode 52 and the dummy conductive portions, connectionportions 57 formed of a conductive material such as polysilicon dopedwith impurities may be provided. The connection portions 57 are formedat the upper surface of the semiconductor substrate. Between theconnection portions 57 and the semiconductor substrate, an insulatingfilm such as a thermal oxide film is formed.

The gate electrode 50 passes through the contact hole 55 to contact agate wire 51. The gate wire 51 is formed of polysilicon or the likedoped with impurities. At the upper surface of the semiconductorsubstrate, the gate wire 51 is connected with gate conductive portionsin the gate trench portion 40. That is, at the upper surface of thesemiconductor substrate, the gate wire 51 is formed across a portionbetween parts of the gate trench portions 40 and the contact hole 55.

The emitter electrode 52 and the gate electrode 50 are formed of ametal-containing material. For example, at least a partial region ofeach electrode is formed of aluminum or an aluminum-silicon alloy. Eachelectrode may have a barrier metal formed of titanium, a titanium alloyor the like as a layer underlying a region formed of aluminum or thelike, and may have a plug formed of tungsten or the like in a contacthole.

One or more gate trench portions 40 and one or more dummy trenchportions 30 are arrayed at predetermined intervals along a predeterminedarray direction in the region of the transistor portion 70. In thetransistor portion 70, one or more gate trench portions 40 and one ormore dummy trench portions 30 may be formed alternately along the arraydirection. Also, dummy trench portions 30 are arrayed at predeterminedintervals along the array direction in the region of the diode portion80.

A dummy trench portion 30 is formed extending in a predeterminedextension direction at the upper surface of the semiconductor substrate.Some of dummy trench portions 30 in the transistor portion 70 of thepresent example have linear shapes, and are formed extending in anextension direction perpendicular to the above-mentioned arraydirection. Also, some of dummy trench portions 30 in the transistorportion 70 have shapes consisting of two straight lines being connectedby a curved portion at their end portions.

In FIG. 1, the X-axis direction is assumed to be the array direction oftrench portions. Also, the Y-axis direction is assumed to be theextension direction of trench portions. The X-axis and the Y-axis areaxes that are orthogonal to each other on a plane parallel with theupper surface of the semiconductor substrate. Also, the axis that isorthogonal to the X-axis and the Y-axis is assumed to be the Z-axis. Inthe present specification, the Z-axis direction is in some casesreferred to as the depth direction.

In the transistor portion 70, at its boundary facing the diode portion80, a plurality of dummy trench portions 30 may be arrayed continuously.The number of dummy trench portions 30 arrayed continuously at theboundary facing the diode portion 80 may be greater than the number ofdummy trench portions 30 arrayed continuously at inner positions in thetransistor portion 70 that are apart from the diode portion 80.

In the example of FIG. 1, in the transistor portion 70 at the boundaryfacing the diode portion 80, three dummy trench portions 30, in total,including two dummy trench portions 30 that are coupled at their endportions and one linear-shaped dummy trench portion 30 are arrayedcontinuously (a dummy trench portion 30 overlapping the boundary betweenthe transistor portion 70 and the diode portion 80 is not counted). Incontrast to this, at inner positions in the transistor portion 70, gatetrench portions 40 and dummy trench portions 30 are arrayed alternatelyone by one.

A gate trench portion 40 has facing portions 41 and a protruding portion43. The facing portions 41 are formed extending in the above-mentionedextension direction within a range to face a dummy trench portion 30 inthe transistor portion 70. That is, the facing portions 41 are formed inparallel with the dummy trench portion 30. The protruding portion 43extends further from the facing portions 41 and is formed in a range notto face the dummy trench portion 30. In the present example, two facingportions 41 provided on both the sides of a dummy trench portion 30 areconnected by one protruding portion 43. At least part of the protrudingportion 43 may have a curved shape.

In a protruding portion 43, a gate conductive portion in a gate trenchportion 40 and the gate wire 51 are connected. The gate wire 51 may beconnected with the gate conductive portion in a region of the protrudingportion 43 that is farthest from facing portions 41. In the regionfarthest from the facing portions 41, the protruding portion 43 of thepresent example has a portion that extends in a direction orthogonal tothe facing portions 41. The gate wire 51 may connect with the gateconductive portion at the portion of the protruding portion 43.

A dummy trench portion 30 in the diode portion 80 may have a shapesimilar to that of a dummy trench portion 30 in a gate trench portion 40or may have a shape similar to that of a gate trench portion 40.However, a dummy trench portion 30 in the diode portion 80 has a lengthwhich is the same as that of a dummy trench portion 30 in the transistorportion 70.

The emitter electrode 52 is formed above the gate trench portions 40,the dummy trench portions 30, the well region 17, the emitter regions12, the base regions 14 and the contact regions 15. The well region 17is formed in a predetermined range from an end portion of an activeregion on the side in which the gate electrode 50 is provided. Thediffusion depth of the well region 17 may be greater than the depths ofthe gate trench portions 40 and the dummy trench portions 30. Partialregions of the gate trench portions 40 and the dummy trench portions 30on the gate electrode 50 side are formed in the well region 17. Thebottoms of the ends of the dummy trench portions 30 in the extensiondirection may be covered by the well region 17.

A protruding portion 43 of a gate trench portion 40 may be entirelyformed in the well region 17. The semiconductor substrate is of a firstconductivity type, and the well region 17 is of a second conductivitytype which is different from the conductivity type of the semiconductorsubstrate. The semiconductor substrate of the present example is ofN−-type, and the well region 17 is of P+-type. In the present exampleexplained, the first conductivity type is N-type, and the secondconductivity type is P-type. However, the first and second conductivitytypes may be opposite conductivity types.

In a mesa portion 94 which is a region sandwiched by respective trenchportions, a base region 14 is formed. Furthermore, the mesa portion 94may be a region sandwiched by adjacent trench portions along the arraydirection and a region from a position which is deepest at the bottomsurfaces of the trench portions to the upper surface (in other words,the front surface) of the semiconductor substrate. The base region 14 isof a second conductivity type with a doping concentration lower thanthat of the well region 17. The base region 14 of the present example isof P−-type.

At the upper surface of a base region 14 in a mesa portion 94, a secondconductivity type contact region 15 having a doping concentration higherthan that of the base region 14 is formed. The contact region 15 of thepresent example is of P+-type. Also, in the transistor portion 70, atpart of the upper surface of the contact region 15, a first conductivitytype emitter region 12 with a doping concentration higher than that ofthe semiconductor substrate is selectively formed. The emitter region 12of the present example is of N+-type.

Each of the contact region 15 and the emitter region 12 is formedextending from one of adjacent trench portions to the other trenchportion. One or more contact regions 15 and one or more emitter regions12 of the transistor portion 70 are formed so as to be exposed to theupper surface of a mesa portion 94 alternately along the extensiondirection of trench portions. In a mesa portion 94 of the diode portion80, a contact region 15 is formed in a region facing at least onecontact region 15 in the transistor portion 70. In the example of FIG.1, in a mesa portion 94 of the diode portion 80, a contact region 15 isformed in a region facing a contact region 15 that is in the transistorportion 70 and is closest to the gate electrode 50, and base regions 14are formed in other regions.

In the transistor portion 70, the contact holes 54 are formed aboverespective regions of contact regions 15 and emitter regions 12. Thecontact holes 54 are not formed in regions corresponding to base regions14 and the well region 17.

In the diode portion 80, the contact hole 54 is formed above the contactregion 15 and the base regions 14. Contact holes 54 of the presentexample are not formed for base regions 14 which are among a pluralityof base regions 14 in the mesa portions 94 of the diode portion 80 andare closest to the gate electrode 50. In the present example, thecontact holes 54 of the transistor portion 70 and the contact hole 54 ofthe diode portion 80 have the same length in the extension direction ofrespective trench portions. Although in the diode portion 80 of FIG. 1,a contact region 15 is formed at an end of the contact hole 54 in theextension direction, this contact region 15 may not be present. Also, ifin the diode portion 80 also, a plug formed of tungsten or the like isformed in a contact hole, a contact region 15 may be formed at a surfaceof a base region 14 exposed through a contact hole.

Among a plurality of mesa portions 94, at least one boundary mesaportion 94-1 at the boundary between the transistor portion 70 and thediode portion 80 has, at the upper surface of the semiconductorsubstrate, a P+-type contact region 15 having a concentration higherthan that of base regions 14. The area of the contact region 15 exposedto the upper surface of the semiconductor substrate at the boundary mesaportion 94-1 is greater than the areas of contact regions 15 exposed tothe upper surface of the semiconductor substrate at other mesa portions94.

In the example of FIG. 1, one mesa portion 94 that is adjacent to theboundary between the transistor portion 70 and the diode portion 80 andis on the transistor portion 70 side is the boundary mesa portion 94-1.In the boundary mesa portion 94-1, in addition to regions where contactregions 15 are formed in other mesa portions 94 of the transistorportion 70, also in regions where emitter regions 12 are formed in othermesa portions 94 of the transistor portion 70, contact regions 15 areformed. That is, the boundary mesa portion 94-1 of the present exampledoes not have an emitter region 12 at the upper surface of thesemiconductor substrate.

Also, at least parts of mesa portions 94 on the diode portion 80 siderelative to the boundary mesa portion 94-1 have base regions 14 at theupper surface of the semiconductor substrate. In the mesa portions 94,the region facing the contact region 15 in the boundary mesa portion94-1 is also a base region 14. The base regions 14 in the presentexample function as anode regions of a diode.

Also, in a partial region of the transistor portion 70, accumulationregions 16 are formed below base regions 14. In FIG. 1, the region wherethe accumulation regions 16 are formed is indicated with dotted lines.Also, in a partial region of the diode portion 80, a cathode region 82is formed below a base region 14. In FIG. 1, the region where thecathode region 82 is formed is indicated with dotted lines.

The cathode region 82 may be at a position that imaginarily appears onthe lower surface of the semiconductor substrate if a base region 14exposed to the upper surface (in other words, the front surface) of thesemiconductor substrate is imaginarily projected onto the lower surface.In other words, the cathode region 82 may be separated from a positionthat imaginarily appears on the lower surface (in other words, the rearsurface) of the semiconductor substrate if a contact region 15 formed atan end of the contact hole 54 in the extension direction of trenchportions is projected onto the lower surface.

FIG. 2 is a figure showing one example of a cross-section taken alonga-a′ through the semiconductor device 100 shown in FIG. 1. Thecross-section taken along a-a′ is a cross-section that is parallel withthe X-Z plane and passes through emitter regions 12 of the transistorportion 70. In FIG. 2, a mask 110 used at the manufacture of thesemiconductor device 100 is shown as well.

In the cross-section, the semiconductor device 100 of the presentexample has a semiconductor substrate 10, an interlayer dielectric film26, the emitter electrode 52 and a collector electrode 24. The emitterelectrode 52 is formed at the upper surfaces of the semiconductorsubstrate 10 and the interlayer dielectric film 26.

The collector electrode 24 is formed at the lower surface of thesemiconductor substrate 10. The lower surface refers to the surfaceopposite to the upper surface. The emitter electrode 52 and thecollector electrode 24 are formed of conductive materials such as metal.Also in the present specification, surfaces or end portions ofrespective members such as a substrate, a layer or a region on theemitter electrode 52 side are referred to as upper surfaces or upperends, and their surfaces or end portions on the collector electrode 24side are referred to as lower surfaces or lower ends. Also, thedirection linking the emitter electrode 52 and the collector electrode24 is referred to as the depth direction.

The semiconductor substrate 10 may be a silicon substrate, a siliconcarbide substrate, a nitride semiconductor substrate such as a galliumnitride substrate or the like. On the upper surface side of thesemiconductor substrate 10, P−-type base regions 14 are formed.

In the cross-section, on the upper surface side of each mesa portion 94of the transistor portion 70, an N+-type emitter region 12, a P−-typebase region 14 and an N+-type accumulation region 16 are formedsequentially from the upper surface side of the semiconductor substrate10.

In the cross-section, on the upper surface side of each mesa portion 94of the diode portion 80, a P−-type base region 14 is formed. In eachmesa portion 94 of the diode portion 80, an accumulation region 16 isnot formed.

In the transistor portion 70, an N−-type drift region 18 is formed atthe lower surfaces of the accumulation regions 16. By providing theaccumulation regions 16 having concentrations higher than that of thedrift region 18 between the drift region 18 and the base regions 14, acarrier injection-enhancement effect (IE effect) can be enhanced tolower ON-voltage.

The accumulation regions 16 are formed in respective mesa portions 94 ofthe transistor portion 70. The accumulation regions 16 may be providedto cover the entire lower surfaces of the base regions 14 in therespective mesa portions 94. However, in some mesa portions 94 near theboundary between the transistor portion 70 and the diode portion 80, thelower surfaces of the base regions 14 are not covered by accumulationregions 16.

In the diode portion 80, the drift region 18 is formed at the lowersurface of the base region 14. In both the transistor portion 70 and thediode portion 80, an N−-type buffer region 20 is formed at the lowersurface of the drift region 18.

The buffer region 20 is formed on the lower surface side of the driftregion 18. The doping concentration of the buffer region 20 is higherthan the doping concentration of the drift region 18. The buffer region20 may function as a field-stop layer than prevents a depletion layerspreading from the lower surface side of the base region 14 fromreaching a P+-type collector region 22 and the N+-type cathode region82.

In the transistor portion 70, the P+-type collector region 22 is formedat the lower surface of the buffer region 20. In the diode portion 80,the N+-type cathode region 82 is formed at the lower surface of thebuffer region 20.

In the present specification, a plane that passes through the boundarybetween the collector region 22 and the cathode region 82 and isparallel with the Y-Z plane is assumed to be the boundary between thetransistor portion 70 and the diode portion 80. The boundary between thecollector region 22 and the cathode region 82 may be at a position wherethe distribution of the net doping concentration of impurities in theX-axis direction exhibits the minimum value. Any of dummy trenchportions 30 may be formed at the boundary between the transistor portion70 and the diode portion 80. Also, the position of a dummy trenchportion 30 along the X-axis that is closest to a position at which thenet doping concentration exhibits the minimum value may be assumed to bethe boundary position between the transistor portion 70 and the diodeportion 80. Also, the collector electrode 24 is provided at the lowersurfaces of the collector region 22 and the cathode region 82.

On the upper surface side of the semiconductor substrate 10, one or moregate trench portions 40 and one or more dummy trench portions 30 areformed. Each trench portion extends from the upper surface of thesemiconductor substrate 10, penetrates a base region 14 and reaches thedrift region 18. In a region where at least any of an emitter region 12,a contact region 15 and an accumulation region 16 is provided, eachtrench portion also penetrates the region(s) provided and reaches thedrift region 18.

A gate trench portion 40 has a gate trench, a gate-insulating film 42and a gate conductive portion 44 that are formed on the upper surfaceside of the semiconductor substrate 10. The gate-insulating film 42 isformed covering the inner wall of the gate trench. The gate-insulatingfilm 42 may be formed by oxidizing or nitriding a semiconductor at theinner wall of the gate trench. The gate conductive portion 44 is formedinside the gate-insulating film 42 within the gate trench. That is, thegate-insulating film 42 insulates the gate conductive portion 44 fromthe semiconductor substrate 10. The gate conductive portion 44 is formedof a conductive material such as polysilicon.

The gate conductive portion 44 includes, in the Z-axis direction, atleast a region facing an adjacent base region 14. The gate trenchportion 40 is covered by the interlayer dielectric film 26 at the uppersurface of the semiconductor substrate 10. In the present example, asshown in FIG. 1, a gate conductive portion 44 at a protruding portion 43electrically connects with the gate electrode 50 via the gate wire 51.If a predetermined voltage is applied to the gate conductive portion 44,a channel is formed at a front layer of the interface that is part of abase region 14 and contacts the gate trench.

In the cross-section, a dummy trench portion 30 may have a structurewhich is the same as that of a gate trench portion 40. A dummy trenchportion 30 has a dummy trench, a dummy insulating film 32 and a dummyconductive portion 34 that are formed on the upper surface side of thesemiconductor substrate 10. The dummy insulating film 32 is formedcovering the inner wall of the dummy trench. The dummy conductiveportion 34 is formed within the dummy trench and formed inside the dummyinsulating film 32. The dummy insulating film 32 insulates the dummyconductive portion 34 from the semiconductor substrate 10. The dummyconductive portion 34 may be formed of a material which is the same asthat of a gate conductive portion 44. For example, the dummy conductiveportion 34 is formed of a conductive material such as polysilicon. Thedummy conductive portion 34 may have a length in the depth directionwhich is the same as that of a gate conductive portion 44.

A dummy trench portion 30 is covered by the interlayer dielectric film26 at the upper surface of the semiconductor substrate 10. In thepresent example, as shown in FIG. 1, a dummy conductive portion 34electrically connects with the emitter electrode 52 via a contact hole56.

In the present example, in the boundary mesa portion 94-1 that is amongthe plurality of mesa portions 94 and is at the boundary between thetransistor portion 70 and the diode portion 80, an emitter region 12exposed to the upper surface of the semiconductor substrate 10 is notformed, but a contact region 15 exposed to the upper surface of thesemiconductor substrate 10 is formed. As shown in FIG. 1, over theentire boundary mesa portion 94-1, an emitter region 12 exposed to theupper surface of the semiconductor substrate 10 is preferably notformed. The contact region 15 of the boundary mesa portion 94-1 isconnected with the emitter electrode 52 via a contact hole 54.

The mesa portion 94 at the boundary between the transistor portion 70and the diode portion 80 refers to a mesa portion 94 overlapping theboundary in the X-axis. If the boundary overlaps any trench portion inthe X-axis, a mesa portion 94 adjacent to the boundary between thetransistor portion 70 and the diode portion 80 refers to a mesa portion94 adjacent to the trench portion. In the present example, among mesaportions 94 adjacent to a dummy trench portion 30-1 overlapping theboundary between the transistor portion 70 and the diode portion 80, themesa portion 94 on the transistor portion 70 side is the boundary mesaportion 94-1.

A plurality of mesa portions 94 that are adjacent to the boundarybetween the transistor portion 70 and the diode portion 80 and arecontinuous in the array direction may be the boundary mesa portions94-1. Also, a mesa portion 94 adjacent to the boundary on the diodeportion 80 side may be the boundary mesa portion 94-1.

By providing the boundary mesa portion 94-1, holes near the boundarybetween the transistor portion 70 and the diode portion 80 can beextracted efficiently at the time of turn-off of the semiconductordevice 100. Thereby, tail current at the time of turn-off can be reducedefficiently to reduce loss at the time of turn-off Also, lowering of thewithstand capability of the semiconductor device 100 can be suppressed.Also, flow of holes accumulated in the region of the transistor portion70 into the region of the diode portion 80 can be suppressed to reduceinfluence on the diode portion 80.

Also, at least one among the boundary mesa portions 94-1 is preferablynot provided with an accumulation region 16. As one example, all theboundary mesa portions 94-1 are not provided with accumulation regions16. Thereby, holes can be extracted in the boundary mesa portions 94-1without being inhibited by accumulation regions 16.

The mask 110 is used at a step of implanting impurities into a regioncorresponding to the accumulation regions 16. The mask 110 is arrangedto cover the diode portion 80 and the boundary mesa portion 94-1. Themask 110 may be formed by applying a resist or the like, followed bypatterning into a predetermined shape. Accumulation regions 16 are notformed in regions covered by the mask 110, and accumulation regions 16are formed in regions not covered by the mask 110.

An end portion of the mask 110 is preferably formed perpendicularly at aposition where it aligns with an end portion of the boundary mesaportion 94-1. But if dripping of resist or the like occurs to the mask110, an excess portion 112 may be formed beyond the above-mentionedposition. If the excess portion 112 is formed, an accumulation region 16is not formed at a predetermined depth in a mesa portion 94 covered bythe excess portion 112. For example, in the mesa portion 94 covered bythe excess portion 112, an accumulation region 16 is not formed at allor the depth position where it is formed becomes shallower than apredetermined depth.

Accumulation regions 16 of the present example include a firstaccumulation region 16-1 and a second accumulation region 16-2. Thefirst accumulation region 16-1 is formed at a predetermined depthposition. The first accumulation region 16-1 is formed at an innerposition in the transistor portion 70.

The second accumulation region 16-2 is formed at a position closer tothe diode portion 80 than the first accumulation region 16-1 is. Thesecond accumulation region 16-2 is formed at a position shallower thanthe first accumulation region 16-1 is. That is, the second accumulationregion 16-2 is formed on the upper surface side of the semiconductorsubstrate 10 relative to the first accumulation region 16-1. Thepositions at which second accumulation regions 16-2 are formed may begradually shallower as their distances to the diode portion 80 decrease.First accumulation regions 16-1 and second accumulation regions 16-2 maybe formed continuously, and may also be formed discontinuously in thedepth direction.

If the depth position of an accumulation region 16 changes, the lengthof a base region 14 in the mesa portion 94 in the depth directionchanges. Because of this, if a gate trench portion 40 is providedadjacent to the mesa portion 94, a threshold voltage Vth of the mesaportion 94 varies relative to a threshold voltage Vth of another mesaportion 94, and fluctuation of threshold voltages increases. Also,fluctuation of saturation current increases. Also, forward voltage ofthe diode portion 80 becomes lower than a predetermined design value insome cases.

In contrast to this, in the semiconductor device 100 of the presentexample, trench portions adjacent to the boundary mesa portion 94-1 aredummy trench portions 30. Also, at least one trench portion providedadjacent to the trench portion adjacent to the boundary mesa portion94-1 and at an inner position in the transistor portion 70 side relativeto the trench portion adjacent to the boundary mesa portion 94-1 is adummy trench portion 30. Thereby, fluctuation of threshold voltage andthe like can be reduced. More preferably, all the trench portionsadjacent to a mesa portion 94 provided with a second accumulation region16-2 are dummy trench portions 30. Also, all the trench portions on thediode portion 80 side relative to the mesa portion 94 provided with thesecond accumulation region 16-2 are preferably dummy trench portions 30.Thereby, fluctuation of threshold voltage and the like can further bereduced.

However, if both a first accumulation region 16-1 and a secondaccumulation region 16-2 are formed in one mesa portion 94, a trenchportion adjacent to the first accumulation region 16-1 may be a gatetrench portion 40. In this case, a trench portion adjacent to the secondaccumulation region 16-2 is preferably a dummy trench portion 30.

FIG. 3 is a figure showing another example of the cross-section takenalong a-a′ through the semiconductor substrate 10. In the presentexample, a lifetime killer 96 is further included in the configurationof the semiconductor substrate 10 shown in FIG. 2. Also, a plurality ofboundary mesa portions 94-1 are formed in the semiconductor substrate 10in FIG. 3. In other respects, the structure may be the same as that inthe example shown in FIG. 2.

The lifetime killer 96 is provided on the upper surface side of thesemiconductor substrate 10. The upper surface side of the semiconductorsubstrate 10 refers to the upper surface side at least relative to themiddle of the drift region 18 in the depth direction. The lifetimekiller 96 may be formed in the entire diode portion 80. Thereby, thecarrier lifetime in the diode portion 80 can be adjusted, and forexample the diode portion 80 can be allowed to perform soft-recoveryoperations. The lifetime killer 96 may be any matter as long as it canadjust the carrier lifetime of the semiconductor substrate 10 locally inthe depth direction. For example, the lifetime killer 96 is heliumlocally implanted to the semiconductor substrate 10.

In the transistor portion 70, the lifetime killer 96 of the presentexample is formed also in a region adjacent to the diode portion 80.However, in the transistor portion 70, the lifetime killer 96 is notformed below a region where the first accumulation region 16-1 isformed. Thereby, the IE effect due to the accumulation regions 16 can beprevented from being cancelled out by the lifetime killer 96.

The lifetime killer 96 of the present example is not formed below mesaportions 94 in which first accumulation regions 16-1 are formed. Also,the lifetime killer 96 may not be formed also below at least one mesaportion 94 adjacent to, on the diode portion 80 side, a mesa portion 94in which a first accumulation region 16-1 is formed. Thereby, influenceof the lifetime killer 96 on the IE effect can be reduced.

The lifetime killer 96 may be formed below at least one boundary mesaportion 94-1 that is closest to the diode portion 80. In the presentexample, the lifetime killer 96 is formed below all the boundary mesaportions 94-1. Thereby, influence of carriers in the transistor portion70 on the diode portion 80 can be reduced.

Also, the lifetime killer 96 may be formed also below a mesa portion 94in which a second accumulation region 16-2 is formed. A region where thelifetime killer 96 is formed may terminate below a region where thesecond accumulation region 16-2 is formed. Thereby, influence of thelifetime killer 96 on the IE effect and on the diode portion 80 can bereduced.

FIG. 4 is a figure for explaining the size of a predetermined part inthe semiconductor substrate 10 shown in FIG. 2 or FIG. 3. In the X-axisdirection, the distance from the boundary between the transistor portion70 and the diode portion 80 to a dummy trench portion 30-2 between amesa portion 94-2 having an emitter region 12 and a boundary mesaportion 94-1 is assumed to be Da. The position of a dummy trench portion30 refers to the position of the center of the dummy trench portion 30in the X-axis direction.

Also, in the X-axis direction, the distance from the dummy trenchportion 30-2 to a dummy trench portion 30-3 is assumed to be Db. Thedummy trench portion 30-3 refers to a dummy trench portion 30 that isamong dummy trench portions 30 arrayed continuously from the boundarybetween the transistor portion 70 and the diode portion 80 toward thetransistor portion 70 side and is farthest from the boundary between thetransistor portion 70 and the diode portion 80. In the Z-axis direction,the distance from the lower surface of the semiconductor substrate 10 tothe lower surface of the base regions 14 is assumed to be Dt. In theZ-axis direction, the thickness of the mask 110 is assumed to be Dc.

Here, preferably, 100 μm<Da+Dt<150 μm. If 100 μm<Da+Dt, the distancebetween the mesa portion 94-2 and the cathode region 82 can be ensured.Because of this, variation in forward voltage at the diode portion 80due to an accumulation region 16 not being formed in the mesa portion94-2 can be suppressed. Also, if Da+Dt<150 μm, the size of anineffective area not functioning as a transistor in the transistorportion 70 can be limited. As one example, Dt may be about 70 μm.

Also, preferably, Db>1.2Dc. The length of the excess portion 112 of themask 110 in the X-axis direction depends on a thickness Dc of the mask110. If Db>1.2Dc, a trench portion adjacent to a region where the secondaccumulation region 16-2 is likely to be formed can be allowed tofunction as a dummy trench portion 30. Because of this, fluctuation ofthreshold voltage and saturation current can be reduced. Also, Db may beequal to or greater than 6 μm. Also, 2.0Dc>Db, or 1.5Dc>Db. Thereby, thesize of an ineffective area not functioning as a transistor in thetransistor portion 70 can be limited.

FIG. 5 is a figure showing one example of a cross-section taken alongb-b′ through the semiconductor device 100 shown in FIG. 1. Thecross-section taken along b-b′ is a plane that is parallel with the Y-Zplane, and passes through a connection portion 57 in a mesa portion 94on the transistor portion 70 side relative to the boundary mesa portion94-1. An accumulation region 16 is formed in the mesa portion 94. Alsoin FIG. 5, the position of a contact hole 54 formed facing thecross-section is indicated with dotted lines.

As shown in FIG. 1, at the upper surface of the semiconductor substrate10, the mesa portion 94 has emitter regions 12 and contact regions 15alternately along the extension direction of trench portions. Also, anaccumulation region 16 is formed at the lower surface of the base region14.

Also, an end portion position of an outermost accumulation region 16 inthe Y-axis direction (in other words, closest to the gate electrode 50)is assumed to be P1. An outermost end portion position of the contacthole 54 in the Y-axis direction is assumed to be P2. An end portionposition of an outermost emitter region 12 in the Y-axis direction onthe gate electrode 50 side is assumed to be P3. An end portion positionof an outermost contact region 15 in the Y-axis direction on the gateelectrode 50 side is assumed to be P4.

The accumulation region 16 is preferably formed to reach an outerposition relative to an end portion of the outermost emitter region 12in the Y-axis direction. That is, the end portion position P1 of theaccumulation region 16 is preferably arranged at an outer positionrelative to the end portion position P3 of the emitter region 12.Thereby, the IE effect in the accumulation region 16 can be enhanced.

Also, the contact hole 54 is preferably formed to reach an outerposition relative to the accumulation region 16 in the Y-axis direction.That is, the end portion position P2 of the contact hole 54 ispreferably arranged at an outer position relative to the end portionposition P1 of the accumulation region 16. Thereby, at the time ofturn-off of the semiconductor device 100, holes can be extractedefficiently from an outer position relative to the accumulation region16.

Also, an outermost contact region 15 in the Y-axis direction ispreferably formed to reach an outer position relative to the contacthole 54. That is, the end portion position P4 of the contact region 15is preferably arranged at an outer position relative to the end portionposition P2 of the contact hole 54. Thereby, at the time of turn-off ofthe semiconductor device 100, holes can be extracted efficiently from anouter position relative to the accumulation region 16.

Also, the distance from the end portion position P3 of the emitterregion 12 to the end portion position P1 of the accumulation region 16may be shorter than the distance from the end portion position P1 of theaccumulation region 16 to the end portion position P4 of the contactregion 15. Thereby, inhibition of extraction of holes by theaccumulation region 16 can be suppressed. Also, electric field crowdingat an end portion of the accumulation region 16 can be relaxed. Thedistance between the end portion positions P3 and P1 is preferablyshorter than the distance from the end portion position P1 of theaccumulation region 16 to the end portion position P2 of the contacthole 54.

As one example, the distance from the end portion position P3 of theemitter region 12 to the end portion position P1 of the accumulationregion 16 is equal to or shorter than 12 μm. Also, the distance from theend portion position P1 of the accumulation region 16 to the end portionposition P2 of the contact hole 54 is equal to or shorter than 20 μm.Also, the distance from the end portion position P2 of the contact hole54 to the end portion position P4 of the contact region 15 is equal toor shorter than 1 μm.

In FIG. 1 to FIG. 4, the semiconductor device 100 including the diodeportion 80 is explained. In contrast to this, the semiconductor device100 shown in FIG. 5 may or may not include a diode portion 80. Even if adiode portion 80 is not included, the semiconductor device 100 canattain the above-mentioned effects.

Also, at the upper surface of the semiconductor substrate 10, a baseregion 14 is formed between the outermost contact region 15 and the wellregion 17. That is, a region with relatively high resistance is arrangedoutside the contact region 15. Thereby, at the time of reverse recovery,carriers to go around from the transistor portion 70 into the diodeportion 80 can be reduced. Accordingly, concentration of carriers at anend portion of a contact region 15 in the diode portion 80 can besuppressed, and lowering of the withstand capability of the diodeportion 80 can be suppressed. In the Y-axis direction, the length of thebase region 14 between the contact region 15 and the well region 17 maybe equal to or longer than 10 μm and equal to or shorter than 50 μm.

FIG. 6 is an enlarged figure showing the portion near an end portion 98of an accumulation region 16 in the cross-section shown in FIG. 5. Theend portion 98 of the accumulation region 16 may be formed such that thedepth of part thereof decreases as the distance of the part from itsoutermost edge in the Y-axis direction decreases. For example, the edgeof the accumulation region 16 in the Y-axis direction is formed at aposition shallower than the accumulation region 16 below the emitterregion 12. The edge of the accumulation region 16 may be formed at aposition not contacting the drift region 18. The edge of theaccumulation region 16 may be provided at a position shallower than themiddle of the base region 14 in the Z-axis direction.

With a shape like this, at the turn-off of the semiconductor device 100,holes can be extracted efficiently at the portion near the end portion98 of the accumulation region 16. The accumulation region 16 of thepresent example can be formed readily using the mask 110 having theexcess portion 112 explained with reference to FIG. 2. Also, the shapeof the end portion 98 of the accumulation region 16 can be controlled byadjusting the shape of the excess portion 112 of the mask 110. As oneexample, the bake temperature or bake time for the mask 110, or thethickness or material of the mask 110 may be adjusted.

FIG. 7 is a figure showing one example of a semiconductor device 200according to a comparative example. In the semiconductor device 200 ofthe present example, a gate trench portion 40 is formed adjacent to asecond accumulation region 16-2. As mentioned above, if a gate trenchportion 40 is provided adjacent to a second accumulation region 16-2,fluctuation of threshold voltage Vth and saturation current at thetransistor portion 70 increases. In contrast to this, because accordingto the semiconductor device 100, a dummy trench portion 30 is providedadjacent to a second accumulation region 16-2, fluctuation of thresholdvoltage Vth and saturation current at the transistor portion 70 can bereduced.

FIG. 8 is a top view showing one example of a semiconductor device 300.The semiconductor device 300 is different in terms of the structure ofaccumulation regions 16 from the semiconductor device 100 of therespective aspects explained with reference to FIG. 1 to FIG. 6. Inother respects, the structure may be the same as that of thesemiconductor device 100 of any of the aspects.

The accumulation regions 16 in the semiconductor device 300 are providedin at least partial regions below contact regions 15, but not providedin at least partial regions below emitter regions 12. The accumulationregions 16 of the present example have strip shapes extending along theX-axis direction. The strip-shaped accumulation regions 16 are provideddiscretely along the Y-axis direction. As one example, the respectivestrip-shaped accumulation regions 16 are formed in a range that overlapsthe contact regions 15 but does not overlap the emitter regions 12. Inthe present example, the widths of the strip-shaped accumulation regions16 in the Y-axis direction are smaller than the widths of the contactregions 15 in the Y-axis direction.

FIG. 9 is a figure showing one example of a cross-section taken alongc-c′ in FIG. 8. The cross-section taken along c-c′ is a plane parallelwith the X-Z plane and passes through emitter regions 12. As mentionedabove, in at least partial regions below the emitter regions 12, carrierpassage regions 19 in which accumulation regions 16 are not formed areprovided.

The carrier passage regions 19 are regions where the hole mobility isgreater than that in the accumulation regions 16. The carrier passageregions 19 of the present example refer to regions near the interfacewhere base regions 14 that remained without accumulation regions 16being formed therein and a drift region 18 contacts. The carrier passageregions 19 may be provided over the entire width of the mesa portions 94in the X-axis direction. In another example, the carrier passage regions19 may include an N-type region with a doping concentration lower thanthat of the accumulation regions 16, and higher than that of the driftregion 18. In this case, the concentration of N-type impurities in thecarrier passage regions 19 may be equal to or lower than 1/10 or 1/100of the concentration of N-type impurities in the accumulation regions16.

FIG. 10 is a figure showing one example of a cross-section taken alongd-d′ in FIG. 8. The cross-section taken along d-d′ is a plane that isparallel with the X-Z plane and passes through contact regions 15. Asmentioned above, accumulation regions 16 are formed in at least partialregions below the contact regions 15.

FIG. 11 is a figure showing one example of a cross-section taken alonge-e′ in FIG. 8. The cross-section taken along e-e′ is a plane that isparallel with the Y-Z plane and passes through a connection portion 57.As mentioned above, a carrier passage region 19 is provided below anemitter region 12, and accumulation regions 16 are provided belowcontact regions 15.

By providing the carrier passage regions 19, excessive accumulation ofholes below a base region 14 can be prevented. Because of this, loweringof the withstand capability resulting from the accumulation regions 16being provided can be suppressed.

In the present example, the carrier passage region 19 is provided overthe entire region below the emitter region 12. That is, the width of thecarrier passage region 19 in the Y-axis direction is equal to or greaterthan the width of the emitter region 12 in the Y-axis direction.

The width of the carrier passage region 19 in the Y-axis direction maybe greater than the width of the emitter region 12 in the Y-axisdirection. In this case, the carrier passage region 19 is provided alsobelow end portions of the contact regions 15 in addition to the regionbelow the emitter region 12. Thereby, even if dripping of a resist usedwhen discretely forming accumulation regions 16 occurs, and theaccumulation regions 16 are formed at shallow positions unintentionally,it is possible to suppress shallow accumulation regions 16 beingprovided below the emitter region 12.

In the present example, an end portion position of an accumulationregion 16 that is among a plurality of accumulation regions 16 formedinto strip shapes and is outermost in the Y-axis direction (in otherwords, closest to the gate electrode 50) is assumed to be P1. The otherend portion positions P2, P3, P4 are the same as those in the example ofFIG. 5.

The accumulation region 16 of the present example is formed to reach anouter position relative to the end portion position P2 of the contacthole 54 in the Y-axis direction. That is, the end portion position P1 ofthe accumulation region 16 is arranged at an outer position relative tothe end portion position P2 of the contact hole 54. Because in thepresent example, the carrier passage region 19 is provided, lowering ofthe withstand capability can be suppressed even if the accumulationregion 16 is formed to reach an outer position relative to the contacthole 54. Also, by forming the accumulation region 16 to reach an outerposition relative to the contact hole 54, a certain amount of carrierscan be accumulated also in an end portion region.

The end portion position P1 of the accumulation region 16 may bearranged at an inner position relative to the end portion position P4 ofthe contact region 15. Thereby, inhibition, by the accumulation region16, of extraction of holes from the end portion region at the time ofturn-off can be suppressed.

FIG. 12 is a figure showing one example of a cross-section of a mesaportion 94 on a plane parallel with the Y-Z plane. At the upper surfaceof the mesa portion 94, contact regions 15 and emitter regions 12 arearranged alternately along the Y-axis direction.

As mentioned above, a carrier passage region 19 is provided also belowan end portion 21 that is part of a contact region 15 and adjacent to anemitter region 12. A length L, in the Y-axis direction, of a portion ofthe carrier passage region 19 that overlaps the one end portion 21 ofthe contact region 15 may be equal to or greater than 10% or 20% of thewidth of the contact region 15 in the Y-axis direction. The length L maybe equal to or less than 30% of the width of the contact region 15 inthe Y-axis direction.

FIG. 13 is a figure showing another example of the cross-section of amesa portion 94 on the plane parallel with the Y-Z plane. Accumulationregions 16 of the present example include first accumulation regions16-1 formed at a predetermined depth position and second accumulationregions 16-2 formed at a position shallower than the first accumulationregions 16-1. The second accumulation regions 16-2 are closer to emitterregions 12 in the Y-axis direction than the first accumulation region16-1 are. That is, in the Y-axis direction, the second accumulationregions 16-2 are arranged between the first accumulation regions 16-1and the emitter regions 12.

The first accumulation regions 16-1 are arranged between the base region14 and the drift region 18. The second accumulation regions 16-2 may bein contact with contact regions 15 or separated from the contact regions15. Also, at least some of the second accumulation regions 16-2 may beformed in the contact regions 15. Also, the first accumulation regions16-1 and the second accumulation regions 16-2 may be formed continuouslyor formed separate from each other.

As mentioned above, if an excess portion 112 is generated to the mask110 used to form accumulation regions 16, shallow second accumulationregions 16-2 are formed below the excess portion 112 in some cases. Inthe present example, both the first accumulation regions 16-1 and thesecond accumulation region 16-2 are formed below the contact regions 15,and not formed below the emitter regions 12. Because of this, even ifthe second accumulation regions 16-2 are formed, characteristics such asthe threshold voltage of the semiconductor device 100 are not affected.

The mask 110 is preferably arranged such that an end portion of the mask110 and an end portion of a contact region 15 overlap. Thereby, even ifan excess portion 112 is generated to the mask 110, a secondaccumulation region 16-2 formed below the excess portion 112 can bearranged so as not to overlap an emitter region 12.

FIG. 14 is a top view showing one example of a semiconductor device 400.In the diode portion 80 of the present example, an outer end portion ofthe N+-type cathode region 82 is shifted backward in the Y-axis positivedirection as compared with any of the semiconductor devices shown inFIG. 1 to FIG. 13. Although collector regions 22 are not illustrated inFIG. 14, the transistor portion 70 and the diode portion 80 may havecollector regions 22. The transistor portion 70 of the present examplehas the collector region 22 over the entire surface on the lower surfaceside in a similar manner to that for the semiconductor device 100, thesemiconductor device 200 or the semiconductor device 300. In contrast tothis, the diode portion 80 of the present example has the collectorregion 22 at part on the lower surface side, and the cathode region 82at another part on the lower surface side. That is, on the lower surfaceside of the diode portion 80 of the present example, the cathode region82 is provided in a region not provided with the collector region 22.

An inner end portion of the collector region 22 of the diode portion 80may be positioned at an inner position relative to an outer end portionof the accumulation region 16 of the transistor portion 70, and may bepositioned at an inner position relative to an outer end portion of anoutermost emitter region 12 in the Y-axis direction in the transistorportion 70. In the present example, the inner end portion of thecollector region 22 of the diode portion 80 coincides with an outer endportion of the cathode region 82 of the diode portion 80. In the presentexample, the length, in the Y-axis direction, from the inner end portionof the collector region 22 of the diode portion 80 to the outer endportion of the accumulation region 16 of the transistor portion 70 isreferred to as L. In one example, the length L may be 200 μm.

FIG. 15 is a figure showing one example of a cross-section taken alongc-c′ through the semiconductor device 400 shown in FIG. 14. FIG. 15shows a Y-Z cross-section in the diode portion 80. A dotted line near acontact region 15 indicates the position, in the Y-axis direction, ofthe outer end portion of the accumulation region 16 of the transistorportion 70 in FIG. 14. In contrast to this, the boundary between thecollector region 22 and the cathode region 82 is positioned in theY-axis positive direction shifted by the length L from the outer endportion of the accumulation region 16 of the transistor portion 70.

Because in the present example, the P+-type collector region 22 isextended in the diode portion 80, it becomes easier to inject holes fromthe collector region 22 into the drift region 18. Thereby, for example,if series arm short-circuit in which an upper arm and a lower arm thatare connected in series are simultaneously turned on occurs, avalanchebreakdowns at the rear surface can be prevented by injecting holes fromthe rear surface side. Also, although avalanche breakdowns are likely tooccur due to electric field crowding at a curved portion of the wellregion 17 shown in FIG. 15, the avalanche breakdowns can be suppressedby injecting holes from the rear surface side.

FIG. 16 is a top view showing one example of a semiconductor device 500.The semiconductor device 500 includes boundary mesa portions 94-1 havingstructures different from those in the semiconductor devices 100 of therespective aspects explained with reference to FIG. 1 to FIG. 6. Inother respects, the structure of the semiconductor device 500 may be thesame as that of the semiconductor device 100 of any of the aspects.

The boundary mesa portions 94-1 include, on the transistor portion 70side, one or more boundary mesa portions 94-1A in which the areas ofcontact regions 15 exposed to the upper surface of the semiconductorsubstrate are greater than the exposed areas of base regions 14. Theboundary mesa portions 94-1 may include a plurality of boundary mesaportions 94-1A. Also, the boundary mesa portions 94-1 include, on thediode portion 80 side, one or more boundary mesa portions 94-1B in whichthe areas of contact regions 15 exposed to the upper surface of thesemiconductor substrate are smaller than the exposed areas of baseregions 14. The boundary mesa portions 94-1 may include a plurality ofboundary mesa portions 94-1B.

A mesa portion 94 that is among the mesa portions 94 of the transistorportion 70 and is positioned closest to the diode portion 80 is adjacentto a boundary mesa portion 94-1A along the array direction. A mesaportion 94 that is among the mesa portions 94 of the diode portion 80and is positioned closest to the transistor portion 70 is adjacent to aboundary mesa portion 94-1B along the array direction. A boundary mesaportion 94-1A may be sandwiched by dummy trench portions 30. A boundarymesa portion 94-1B may be sandwiched by dummy trench portions 30.

The distance from the end portion position P3 of the emitter region 12to the end portion position P1 of the accumulation region 16 shown inFIG. 5 is assumed to be Df. Also, the distance from the end portionposition P1 of the accumulation region 16 to the end portion position P4of the contact region 15 is assumed to be Dg.

FIG. 17 is a figure showing one example of a cross-section taken alonga-a′ through the semiconductor device 500 shown in FIG. 16. Thecross-section taken along a-a′ is a cross-section that is parallel withthe X-Z plane and passes through an emitter region 12 of the transistorportion 70. In FIG. 17, illustration of the emitter electrode 52 and thecollector electrode 24 is omitted. The boundary mesa portions 94-1A andthe boundary mesa portions 94-1B include the collector region 22 atcorresponding lower surfaces (in other words, rear surfaces) of thesemiconductor substrate. The collector region 22 may extend from thetransistor portion 70. Also, in FIG. 17, distribution examples of thedoping concentration (/cm³) and defect concentration (/cm³) in across-section taken along g-g′ is shown as well. About the concentrationdistributions, the solid line indicates the doping concentration, andthe dotted line indicates the defect concentration.

In the X-axis direction, the distance from a dummy trench portion 30-2between a mesa portion 94-2 having an emitter region 12 and a boundarymesa portion 94-1A to a dummy trench portion 30 between a boundary mesaportion 94-1A and a boundary mesa portion 94-1B is assumed to be Dd. Thedistance from the dummy trench portion 30 between the boundary mesaportion 94-1A and the boundary mesa portion 94-1B to a boundary betweenthe transistor portion 70 and the diode portion 80 is assumed to be De.The position of a dummy trench portion 30 refers to the position of thecenter of the dummy trench portion 30 in the X-axis direction. Also, inthe Z-axis direction, the distance from the lower surface of thesemiconductor substrate 10 to the lower surface of the base regions 14is assumed to be Dt.

The distance Dd may be longer than the distance De. If the transistorportion 70 is turned off, minority carriers can be extractedeffectively, and turn-off destruction can be prevented. The minoritycarriers are holes in the present example.

On the other hand, the distance De may be longer than the distance Dd.If the diode portion 80 is in its conductive state, minority carriersare injected from both the boundary mesa portions 94-1A and the boundarymesa portions 94-1B. The percentage of the area of a contact region 15with a concentration higher than that of a base region 14 in a boundarymesa portion 94-1A is greater than that in a boundary mesa portion94-1B. Because of this, if the diode portion 80 is in its conductivestate, the concentration of minority carriers at the boundary mesaportions 94-1 and an end of the diode portion 80 in the trench portionarray direction becomes high, and it becomes likely for destruction atthe time of reverse recovery to occur. By making the distance De longerthan the distance Dd, the boundary mesa portions 94-1A and the cathoderegion 82 can be separated, and increase in the concentration ofminority carriers can be suppressed.

The sum of the distance Dd and the distance De may match the distance Da(Dd+De=Da). The sum of the distance Da and the distance Dt (Da+Dt) maybe greater than 100 μm and shorter than 150 μm.

The sum of the distance Dd and the distance De, or the distance Da, maybe greater than the distance Df from the end portion position P3 of theemitter region 12 to the end portion position P1 of the accumulationregion 16. Alternatively, the sum of the distance Dd and the distanceDe, or the distance Da, may be greater than Dg which is the distanceform the end portion position P1 of the accumulation region 16 to theend portion position P4 of the contact region 15. Thereby, if thetransistor portion 70 is turned off, extraction of minority carriers canbe performed effectively. Also, at the time when the diode portion 80 isconductive, injection and accumulation of minority carriers of theboundary mesa portions 94-1 or the diode portion 80 can be suppressed,and reverse recovery destruction can be prevented.

The sum of the distance Dd and the distance De, or the distance Da, maybe greater than the distance Dh from the bottom surfaces of the baseregions 14 of the boundary mesa portions 94-1 to the peak position ofthe defect concentration of the lifetime killer 96. Furthermore, thedistance Dd or distance De may be longer than the distance Dh from thebottom surfaces of the base regions 14 of the boundary mesa portions94-1A or the boundary mesa portions 94-1B to the peak position of thedefect concentration of the lifetime killer 96. Thereby, if thetransistor portion 70 is turned off, extraction of minority carriers canbe performed effectively. Also, at the time when the diode portion 80 isconductive, injection and accumulation of minority carriers of theboundary mesa portions 94-1 or the diode portion 80 can be suppressed,and reverse recovery destruction can be prevented.

The sum of the distance Dd and the distance De, or the distance Da, maybe greater than the distance Di from the bottom surfaces of the baseregions 14 of the boundary mesa portions 94-1 to the position where thedoping concentration becomes higher than the doping concentration of thesemiconductor substrate. Furthermore, the sum of the distance Dd and thedistance De, or the distance Da, may be greater than the distance Djfrom the bottom surfaces of the base regions 14 of the boundary mesaportions 94-1 to the peak position which is among a plurality of peakpositions of the doping concentration in the buffer region 20 and isclosest to the upper surface of the semiconductor substrate. Thereby, ifthe transistor portion 70 is turned off, extraction of minority carrierscan be performed effectively. Also, at the time when the diode portion80 is conductive, injection and accumulation of minority carriers of theboundary mesa portions 94-1 or the diode portion 80 can be suppressed,and reverse recovery destruction can be prevented.

The regions of the peak positions of the doping concentration in thebuffer region 20 may be regions including hydrogen donors. The hydrogendonors may be formed by proton implantation. The hydrogen donors may beVOH complex defects formed by vacancies, oxygen and hydrogen. A region Fthat extends from the position where the doping concentration becomeshigher than the doping concentration of the semiconductor substrate tothe peak position that is among a plurality of peak positions of thedoping concentration in the buffer region 20 and is closest to the uppersurface of the semiconductor substrate may have an approximately flatdoping concentration. Furthermore, the region F may be a regionincluding hydrogen donors. The region F may be formed to be long in thedepth direction below a region where the lifetime killer 96 is formed,as compared with below a region where the lifetime killer 96 is notformed. If the lower surface of the semiconductor substrate isirradiated with the lifetime killer 96, a relatively large amount ofdefects are formed in a region below a region where the lifetime killer96 is formed, and it becomes easier for hydrogen from the buffer region20 to be diffused.

The sum of the distance Dd and the distance De, or the distance Da, maybe less than the distance Dt from the lower surface of the semiconductorsubstrate 10 to the lower surface of the base region 14. If the sum ofthe distance Dd and the distance De, or the distance Da, is greater thanthe distance Dt, the minority carrier extraction and reverse recoverydestruction prevention effects at the time of turn-off are saturated,and a region that does not contribute to current conductivity(ineffective area) increases, so conduction loss and switching lossbegin to increase. In particular, the distance Dd may be shorter thanthe distance Dt.

The sum of the distance Dd and the distance De, or the distance Da, maybe greater than the thermal diffusion length Lt of the semiconductorsubstrate. Assuming that the thermal conductivity of the semiconductorsubstrate is κ, the heat capacity per unit volume is C, and the thermaldiffusion coefficient of the semiconductor substrate per unit volume isα, α=κ/C. Assuming that a predetermined length of time during which heatis diffused is t, the thermal diffusion length Lt=2(αt)^(0.5). As oneexample, if the semiconductor substrate is a silicon substrate, α isabout 1.5×10⁻⁵ (m²/s), for example, and if heat is generated for t whichis about 1 μs per switching operation (for example, per turn-off orreverse recovery operation), Lt becomes 7.7 μm. Accordingly, the sum ofthe distance Dd and the distance De, or the distance Da, may be greaterthan 7.7 μm, for example. The distance Dd or distance De may be set tobe longer than the thermal diffusion length Lt. If heat-generation ofthe transistor portion 70 affects the diode portion 80, temperature ofthe diode portion 80 increases also. Likewise, if heat-generation of thediode portion 80 affects the transistor portion 70, temperature of thetransistor portion 70 increases also. Because increase in temperatureresults in rise in the concentration of minority carriers, the amount ofcarriers that should be extracted increases by a corresponding amount.Because if the distance Dd, distance De or distance Da is set to belonger than the thermal diffusion length Lt, influence of temperatureincrease can be suppressed, extraction of carriers becomes easy. Apredetermined length of time t during which heat is diffused may beequal to a length of time required for a single switching operation, andmay be 0.1 μs to 10 μs, and may be 1 μs, for example.

In the above-mentioned examples in which boundary mesa portions 94-1Bare not included (for example, the semiconductor device 100 of FIG. 1 toFIG. 6, the semiconductor device 300 of FIG. 8 to FIG. 13, thesemiconductor device 400 of FIG. 14 to FIG. 15, or examples obtained bycombining them) also, the above-mentioned relationship may be satisfiedby setting the distance De of the present example to 0.

While the embodiments of the present invention have been described, thetechnical scope of the invention is not limited to the above describedembodiments. It is apparent to persons skilled in the art that variousalterations and improvements can be added to the above-describedembodiments. It is also apparent from the scope of the claims that theembodiments added with such alterations or improvements can be includedin the technical scope of the invention.

The terms “on”, “under”, “above”, “below”, “upper surface”, and “lowersurface” in the present specification are not limited by the upward anddownward directions in relations to the direction of gravity. Theseterms refer to relative directions in relation to predetermined axes.

What is claimed is:
 1. A semiconductor device comprising: asemiconductor substrate having a first conductivity type drift regionand a second conductivity type base region provided above the driftregion; a transistor portion formed in the semiconductor substrate; anda diode portion formed adjacent to the transistor portion and in thesemiconductor substrate, wherein in the transistor portion and the diodeportion: a plurality of trench portions each arrayed along apredetermined array direction; and a plurality of mesa portions formedbetween respective trench portions are formed, among the plurality ofmesa portions, at least one boundary mesa portion at a boundary betweenthe transistor portion and the diode portion includes a secondconductivity type contact region that is at an upper surface of thesemiconductor substrate and has a concentration higher than that of thebase region, an area of the contact region at the boundary mesa portionis greater than an area of the contact region at another mesa portion,among the plurality of trench portions, at least one trench portionprovided adjacent to a trench portion adjacent to the boundary mesaportion and on the transistor portion side relative to the trenchportion adjacent to the boundary mesa portion is a dummy trench portion,the transistor portion and the diode portion further have: a secondconductivity type collector region provided at least below the outermostcontact region in a longitudinal direction different from the arraydirection, and the transistor portion further has: a first conductivitytype accumulation region that is provided between the base region andthe drift region and has a concentration higher than that of the driftregion, and an inner end portion of the collector region of the diodeportion is positioned at an inner position relative to an outer endportion of the accumulation region of the transistor portion.
 2. Thesemiconductor device according to claim 1, wherein the transistorportion further has a first conductivity type emitter region having aconcentration higher than that of the drift region, and an inner endportion of the collector region of the diode portion is positioned at aninner position relative to an outer end portion of the outermost emitterregion in the longitudinal direction in the transistor portion.
 3. Asemiconductor device comprising: a semiconductor substrate having afirst conductivity type drift region and a second conductivity type baseregion provided above the drift region; a plurality of trench portionsthat are formed at an upper surface of the semiconductor substratearrayed parallel to one another, each of the plurality of trenchportions penetrating the base region; a first conductivity type emitterregion having a concentration higher than that of the drift region and asecond conductivity type contact region having a concentration higherthan that of the base region that are formed in a region adjacent to thetrench portion at the upper surface of the semiconductor substrate andalternately along a longitudinal direction of the plurality of trenchportions; and a first conductivity type accumulation region that isformed between the base region and the drift region and has aconcentration higher than that of the drift region, wherein the driftregion does not extend above the accumulation region, and in thelongitudinal direction of the plurality of trench portions, theaccumulation region is formed to extend beyond an end portion of theemitter region, the semiconductor device further has: a transistorportion formed in the semiconductor substrate; and a diode portionformed adjacent to the transistor portion and in the semiconductorsubstrate, the transistor portion and the diode portion further have: asecond conductivity type collector region provided at least below theoutermost contact region in the longitudinal direction; and an inner endportion of the collector region of the diode portion is positioned at aninner position relative to an outer end portion of the accumulationregion of the transistor portion.
 4. The semiconductor device accordingto claim 3, wherein an inner end portion of the collector region of thediode portion is positioned at an inner position relative to an outerend portion of the outermost emitter region in the longitudinaldirection in the transistor portion.
 5. The semiconductor deviceaccording to claim 1, wherein the diode portion has a lifetime killer onan upper surface side of the semiconductor substrate, and in a regionwhere a first accumulation region is formed, the transistor portion doesnot have the lifetime killer on the upper surface side of thesemiconductor substrate.
 6. The semiconductor device according to claim1, wherein the boundary mesa portion has a lifetime killer on the uppersurface side of the semiconductor substrate.
 7. The semiconductor deviceaccording to claim 3, wherein at least a partial region below theemitter region has a carrier passage region where the accumulationregion is not formed.
 8. The semiconductor device according to claim 7,wherein an entire region below the emitter region is provided with thecarrier passage region.
 9. The semiconductor device according to claim8, wherein the carrier passage region is also provided below an endportion that is part of the contact region and adjacent to the emitter10. The semiconductor device according to claim 3, wherein theaccumulation region has: a first accumulation region formed at apredetermined depth position; and a second accumulation region formedcloser to the emitter region than the first accumulation region is andat a position shallower than the first accumulation region is, and boththe first accumulation region and the second accumulation region areformed below the contact region.
 11. The semiconductor device accordingto claim 3, further comprising an interlayer dielectric film formed atthe upper surface of the semiconductor substrate, wherein in theinterlayer dielectric film, a contact hole to expose the emitter regionand the contact region are formed, and in the longitudinal direction,the accumulation region is formed to reach an outer position relative toan end portion of the contact hole.